Abstract
Highly (100) preferred undoped and 1-5% Ni-doped Ba1-x Sr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.
Original language | English |
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Pages (from-to) | 239-243 |
Number of pages | 5 |
Journal | Journal of Electroceramics |
Volume | 13 |
Issue number | 1-3 |
DOIs | |
State | Published - Jul 2004 |
Keywords
- BST
- Interdigital capacitor
- Microwave
- Ni doping