Frequency and voltage dependent dielectric properties of Ni-doped Ba 0.6Sr0.4TiO3 thin films

Mi Hwa Lim, Hyun Suk Kim, Nan Young Kim, Ho Gi Kim, Il Doo Kim, Seung Eon Moon, Min Hwan Kwak, Han Cheol Ryu, Su Jae Lee

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Highly (100) preferred undoped and 1-5% Ni-doped Ba1-x Sr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.

Original languageEnglish
Pages (from-to)239-243
Number of pages5
JournalJournal of Electroceramics
Volume13
Issue number1-3
DOIs
StatePublished - Jul 2004

Keywords

  • BST
  • Interdigital capacitor
  • Microwave
  • Ni doping

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