Frequency and voltage dependent dielectric properties of Ni-doped Ba 0.6Sr0.4TiO3 thin films

Mi Hwa Lim; Hyun Suk Kim; Nan Young Kim; Ho Gi Kim; Il Doo Kim; Seung Eon Moon; Min Hwan Kwak; Han Cheol Ryu; Su Jae Lee

doi:10.1007/s10832-004-5105-z

Frequency and voltage dependent dielectric properties of Ni-doped Ba _0.6Sr_0.4TiO₃ thin films

Mi Hwa Lim
, Hyun Suk Kim
, Nan Young Kim
, Ho Gi Kim
, Il Doo Kim
, Seung Eon Moon
, Min Hwan Kwak
, Han Cheol Ryu
, Su Jae Lee

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Highly (100) preferred undoped and 1-5% Ni-doped Ba_1-x Sr _x TiO₃ (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.

Original language	English
Pages (from-to)	239-243
Number of pages	5
Journal	Journal of Electroceramics
Volume	13
Issue number	1-3
DOIs	https://doi.org/10.1007/s10832-004-5105-z
State	Published - Jul 2004

Keywords

BST
Interdigital capacitor
Microwave
Ni doping

Access to Document

10.1007/s10832-004-5105-z

Cite this

@article{a41f0641e1e1436191eb9aa818a775cc,

title = "Frequency and voltage dependent dielectric properties of Ni-doped Ba 0.6Sr0.4TiO3 thin films",

abstract = "Highly (100) preferred undoped and 1-5\% Ni-doped Ba1-x Sr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1\% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol\% Ni doped BST film is an effective candidate for high performance tunable device applications.",

keywords = "BST, Interdigital capacitor, Microwave, Ni doping",

author = "Lim, \{Mi Hwa\} and Kim, \{Hyun Suk\} and Kim, \{Nan Young\} and Kim, \{Ho Gi\} and Kim, \{Il Doo\} and Moon, \{Seung Eon\} and Kwak, \{Min Hwan\} and Ryu, \{Han Cheol\} and Lee, \{Su Jae\}",

year = "2004",

month = jul,

doi = "10.1007/s10832-004-5105-z",

language = "English",

volume = "13",

pages = "239--243",

journal = "Journal of Electroceramics",

issn = "1385-3449",

publisher = "Springer Netherlands",

number = "1-3",

}

TY - JOUR

T1 - Frequency and voltage dependent dielectric properties of Ni-doped Ba 0.6Sr0.4TiO3 thin films

AU - Lim, Mi Hwa

AU - Kim, Hyun Suk

AU - Kim, Nan Young

AU - Kim, Ho Gi

AU - Kim, Il Doo

AU - Moon, Seung Eon

AU - Kwak, Min Hwan

AU - Ryu, Han Cheol

AU - Lee, Su Jae

PY - 2004/7

Y1 - 2004/7

N2 - Highly (100) preferred undoped and 1-5% Ni-doped Ba1-x Sr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.

AB - Highly (100) preferred undoped and 1-5% Ni-doped Ba1-x Sr x TiO3 (BST) thin films were deposited onto MgO (100) single crystal substrate at 750°C using pulsed laser deposition. BST thin film-based interdigital capacitors (IDC) were prepared by standard photolithography process. The microwave properties of BST films were measured at 10 GHz. Ni-doped BST films showed better dielectric properties by exhibiting improved dielectric Q while retaining an appropriate capacitance tuning compared to undoped BST films. 1% Ni-doped BST film showed the maximum figure of merit of 2896.1. It is suggested that 1 mol% Ni doped BST film is an effective candidate for high performance tunable device applications.

KW - BST

KW - Interdigital capacitor

KW - Microwave

KW - Ni doping

UR - https://www.scopus.com/pages/publications/17044406202

U2 - 10.1007/s10832-004-5105-z

DO - 10.1007/s10832-004-5105-z

M3 - Article

AN - SCOPUS:17044406202

SN - 1385-3449

VL - 13

SP - 239

EP - 243

JO - Journal of Electroceramics

JF - Journal of Electroceramics

IS - 1-3

ER -

Frequency and voltage dependent dielectric properties of Ni-doped Ba _0.6Sr_0.4TiO₃ thin films

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this