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Front end optimization for the monolithic active pixel sensor of the ALICE Inner Tracking System upgrade

  • D. Kim
  • , G. Aglieri Rinella
  • , C. Cavicchioli
  • , N. Chanlek
  • , A. Collu
  • , Y. Degerli
  • , A. Dorokhov
  • , C. Flouzat
  • , D. Gajanana
  • , C. Gao
  • , F. Guilloux
  • , H. Hillemanns
  • , S. Hristozkov
  • , A. Junique
  • , M. Keil
  • , M. Kofarago
  • , T. Kugathasan
  • , Y. Kwon
  • , A. Lattuca
  • , M. Mager
  • K. M. Sielewicz, C. A. Marin Tobon, D. Marras, P. Martinengo, G. Mazza, H. Mugnier, L. Musa, T. H. Pham, C. Puggioni, F. Reidt, P. Riedler, J. Rousset, S. Siddhanta, W. Snoeys, M. Song, G. Usai, J. W. Van Hoorne, P. Yang
  • Dongguk University
  • Yonsei University
  • CERN
  • Suranaree University of Technology
  • University of Cagliari
  • L'Orme des Merisiers
  • Institut Pluridisciplinaire Hubert Curien
  • National Institute for Subatomic Physics
  • Central China Normal University
  • Utrecht University
  • University of Turin
  • Warsaw University of Technology
  • MIND
  • CNRS
  • Heidelberg University 
  • TU Wien

Research output: Contribution to journalArticlepeer-review

37 Scopus citations

Abstract

ALICE plans to replace its Inner Tracking System during the second long shut down of the LHC in 2019 with a new 10 m2 tracker constructed entirely with monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected to produce the sensor as it offers a deep pwell allowing full CMOS in-pixel circuitry and different starting materials. First full-scale prototypes have been fabricated and tested. Radiation tolerance has also been verified. In this paper the development of the charge sensitive front end and in particular its optimization for uniformity of charge threshold and time response will be presented.

Original languageEnglish
Article numberC02042
JournalJournal of Instrumentation
Volume11
Issue number2
DOIs
StatePublished - 15 Feb 2016

Keywords

  • Analogue electronic circuits
  • Electronic detector readout concepts (solid-state)
  • Pixelated detectors and associated VLSI electronics
  • Radiation-hard electronics

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