Full integration of highly stretchable inorganic transistors and circuits within molecular-tailored elastic substrates on a large scale

Seung Han Kang, Jeong Wan Jo, Jong Min Lee, Sanghee Moon, Seung Bum Shin, Su Bin Choi, Donghwan Byeon, Jaehyun Kim, Myung Gil Kim, Yong Hoon Kim, Jong Woong Kim, Sung Kyu Park

Research output: Contribution to journalArticlepeer-review

12 Scopus citations

Abstract

The emergence of high-form-factor electronics has led to a demand for high-density integration of inorganic thin-film devices and circuits with full stretchability. However, the intrinsic stiffness and brittleness of inorganic materials have impeded their utilization in free-form electronics. Here, we demonstrate highly integrated strain-insensitive stretchable metal-oxide transistors and circuitry (442 transistors/cm2) via a photolithography-based bottom-up approach, where transistors with fluidic liquid metal interconnection are embedded in large-area molecular-tailored heterogeneous elastic substrates (5 × 5 cm2). Amorphous indium-gallium-zinc-oxide transistor arrays (7 × 7), various logic gates, and ring-oscillator circuits exhibited strain-resilient properties with performance variation less than 20% when stretched up to 50% and 30% strain (10,000 cycles) for unit transistor and circuits, respectively. The transistors operate with an average mobility of 12.7 (± 1.7) cm2 V−1s−1, on/off current ratio of > 107, and the inverter, NAND, NOR circuits operate quite logically. Moreover, a ring oscillator comprising 14 cross-wired transistors validated the cascading of the multiple stages and device uniformity, indicating an oscillation frequency of ~70 kHz.

Original languageEnglish
Article number2814
JournalNature Communications
Volume15
Issue number1
DOIs
StatePublished - 1 Apr 2024

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