Fully-transparent graphene charge-trap memory device with large memory window and long-term retention

Sejoon Lee, Youngmin Lee, Sung Min Kim, Emil B. Song

Research output: Contribution to journalArticlepeer-review

15 Scopus citations

Abstract

A fully-transparent graphene-based charge-trap memory device was realized by fabricating a graphene-channel field-effect transistor with high-k/low-k/high-k oxide stacks of Al2O3/AlOx/Al2O3 and indium-tin-oxide gate/source/drain electrodes on the polyethylene naphthalate substrate (i.e., ITO-gated AXA-gFET). The usage of low-k AlOx as a charge-trap layer allowed us to demonstrate a high-performance memory device, exhibiting a large memory window of ∼9.2 V and a tenacious retention of the memory window margin up to ∼57% after 10 years. Memory cells comprising the ITO-gated AXA-gFET arrays displayed a high transparency with the average optical transmittance of ∼83% in visible wavelength regions. These properties may move us a step closer to the practical application of graphene-based memories for future transparent electronics. In-depth analyses on the electrical characteristics and the mechanisms of the memory functions are presented.

Original languageEnglish
Pages (from-to)70-76
Number of pages7
JournalCarbon
Volume127
DOIs
StatePublished - Feb 2018

Keywords

  • Graphene
  • Large memory window
  • Nonvolatile charge-trap memory device
  • Tenacious retention characteristics
  • Transparent-flexible electronics

Fingerprint

Dive into the research topics of 'Fully-transparent graphene charge-trap memory device with large memory window and long-term retention'. Together they form a unique fingerprint.

Cite this