Gate-tunable, high-responsivity, and room-temperature infrared photodetectors based on a graphene-Bi2Se3 heterostructure

  • Jaeseok Kim
  • , Houk Jang
  • , Nikesh Koirala
  • , Sangwan Sim
  • , Jae Bok Lee
  • , Un Jeong Kim
  • , Hyangsook Lee
  • , Soonyoung Cha
  • , Chihun In
  • , Jun Park
  • , Jekwan Lee
  • , Matthew Brahlek
  • , Jisoo Moon
  • , Maryam Salehi
  • , Seongshik Oh
  • , Jong Hyun Ahn
  • , Sungwoo Hwang
  • , Dohun Kim
  • , Hyunyong Choi

Research output: Contribution to journalConference articlepeer-review

Abstract

We demonstrate infrared photodetectors based on graphene-Bi2Se3 heterostructures with high responsivity (≥1.9 A/W) at room temperature. Strong photogating effect across the tunneling barrier and built-in potential enables the internal quantum efficiency larger than 100 %.

Original languageEnglish
Article numberSF2E.3
JournalOptics InfoBase Conference Papers
StatePublished - 2016
EventCLEO: Science and Innovations, SI 2016 - San Jose, United States
Duration: 5 Jun 201610 Jun 2016

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