Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices

Seong Deok Ahn, Yoon Ho Song, Sung Yool Choi, Jong Bong Park, Jung Inn Sohn, Seong Hoon Lee, Jin Ho Lee, Kyung Ik Cho

Research output: Contribution to conferencePaperpeer-review

10 Scopus citations

Abstract

We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be applicable to the pre-bunched electron beam sources for microwave amplifier tubes.

Original languageEnglish
Pages55-56
Number of pages2
StatePublished - 2001
EventProceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States
Duration: 12 Aug 200116 Aug 2001

Conference

ConferenceProceedings of the 14th International Vacuum Microelectronics Conference
Country/TerritoryUnited States
CityDavis, CA
Period12/08/0116/08/01

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