Abstract
We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be applicable to the pre-bunched electron beam sources for microwave amplifier tubes.
Original language | English |
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Pages | 55-56 |
Number of pages | 2 |
State | Published - 2001 |
Event | Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001 |
Conference
Conference | Proceedings of the 14th International Vacuum Microelectronics Conference |
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Country/Territory | United States |
City | Davis, CA |
Period | 12/08/01 → 16/08/01 |