Abstract
We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be applicable to the pre-bunched electron beam sources for microwave amplifier tubes.
| Original language | English |
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| Pages | 55-56 |
| Number of pages | 2 |
| State | Published - 2001 |
| Event | Proceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States Duration: 12 Aug 2001 → 16 Aug 2001 |
Conference
| Conference | Proceedings of the 14th International Vacuum Microelectronics Conference |
|---|---|
| Country/Territory | United States |
| City | Davis, CA |
| Period | 12/08/01 → 16/08/01 |