Gated carbon nanotube emitters grown on silicon trench wells with a sidewall spacer for stable vacuum microwave devices

  • Seong Deok Ahn
  • , Yoon Ho Song
  • , Sung Yool Choi
  • , Jong Bong Park
  • , Jung Inn Sohn
  • , Seong Hoon Lee
  • , Jin Ho Lee
  • , Kyung Ik Cho

Research output: Contribution to conferencePaperpeer-review

10 Scopus citations

Abstract

We present the gated carbon nanotubes (CNTs) emitters grown on silicon trench wells with a sidewall spacer for the application of vacuum microwave devices. The side wall spacer enables us to fabricate a highly stable gated CNT emitter. The developed CNT emitter can be applicable to the pre-bunched electron beam sources for microwave amplifier tubes.

Original languageEnglish
Pages55-56
Number of pages2
StatePublished - 2001
EventProceedings of the 14th International Vacuum Microelectronics Conference - Davis, CA, United States
Duration: 12 Aug 200116 Aug 2001

Conference

ConferenceProceedings of the 14th International Vacuum Microelectronics Conference
Country/TerritoryUnited States
CityDavis, CA
Period12/08/0116/08/01

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