Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

Hassan Algadi; Chandreswar Mahata; Turki Alsuwian; Muhammad Ismail; Daewoong Kwon; Sungjun Kim

doi:10.1016/j.matlet.2021.130011

Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

Hassan Algadi, Chandreswar Mahata, Turki Alsuwian, Muhammad Ismail, Daewoong Kwon, Sungjun Kim

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices.

Original language	English
Article number	130011
Journal	Materials Letters
Volume	298
DOIs	https://doi.org/10.1016/j.matlet.2021.130011
State	Published - 1 Sep 2021

Keywords

ALD Pt-nanoparticles
Multilevel conductance properties
STDP
Transparent RRAM

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title = "Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles",

abstract = "ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices.",

keywords = "ALD Pt-nanoparticles, Multilevel conductance properties, STDP, Transparent RRAM",

author = "Hassan Algadi and Chandreswar Mahata and Turki Alsuwian and Muhammad Ismail and Daewoong Kwon and Sungjun Kim",

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doi = "10.1016/j.matlet.2021.130011",

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T1 - Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

AU - Algadi, Hassan

AU - Mahata, Chandreswar

AU - Alsuwian, Turki

AU - Ismail, Muhammad

AU - Kwon, Daewoong

AU - Kim, Sungjun

PY - 2021/9/1

Y1 - 2021/9/1

N2 - ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices.

AB - ITO/HfAlO/Pt-NP/HfAlO/ITO RRAM device was fabricated with atomic layer deposited Pt-NPs. Controlled filament formation and multilevel conductance was observed due to enhancing local electric field near Pt-NPs. Resistive switching properties with ON/OFF ratio of > 10 and good endurance upto 500 cycles were achieved. Potentiation/depression characteristics were successfully demonstrated by applying increasing positive/negative voltage pulses. Gradual change in conductance was implemented for demonstration of spike-timing-dependent plasticity (STDP) learning which shows that the proposed RRAM device can be the possible candidate for electronic synaptic devices.

KW - ALD Pt-nanoparticles

KW - Multilevel conductance properties

KW - STDP

KW - Transparent RRAM

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DO - 10.1016/j.matlet.2021.130011

M3 - Article

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SN - 0167-577X

VL - 298

JO - Materials Letters

JF - Materials Letters

M1 - 130011

ER -

Gradual resistive switching and synaptic properties of ITO/HfAlO/ITO device embedded with Pt nanoparticles

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Keywords

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