Gradually modified conductance in the self-compliance region of an atomic-layer-deposited pt/tio2/hfalox/tin rram device

Hojeong Ryu; Sungjun Kim

doi:10.3390/met11081199

Gradually modified conductance in the self-compliance region of an atomic-layer-deposited pt/tio2/hfalox/tin rram device

Hojeong Ryu, Sungjun Kim

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

8 Scopus citations

Abstract

This study presents conductance modulation in a Pt/TiO₂/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

Original language	English
Article number	1199
Journal	Metals
Volume	11
Issue number	8
DOIs	https://doi.org/10.3390/met11081199
State	Published - Aug 2021

Keywords

Bilayer stack
Resistive switching
Self-compliance
Synaptic device

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10.3390/met11081199

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title = "Gradually modified conductance in the self-compliance region of an atomic-layer-deposited pt/tio2/hfalox/tin rram device",

abstract = "This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.",

keywords = "Bilayer stack, Resistive switching, Self-compliance, Synaptic device",

author = "Hojeong Ryu and Sungjun Kim",

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AU - Kim, Sungjun

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Y1 - 2021/8

N2 - This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

AB - This study presents conductance modulation in a Pt/TiO2/HfAlOx/TiN resistive memory device in the compliance region for neuromorphic system applications. First, the chemical and material characteristics of the atomic-layer-deposited films were verified by X-ray photoelectron spectroscopy depth profiling. The low-resistance state was effectively controlled by the compliance current, and the high-resistance state was adjusted by the reset stop voltage. Stable endurance and retention in bipolar resistive switching were achieved. When a compliance current of 1 mA was imposed, only gradual switching was observed in the reset process. Self-compliance was used after an abrupt set transition to achieve a gradual set process. Finally, 10 cycles of long-term potentiation and depression were obtained in the compliance current region for neuromorphic system applications.

KW - Bilayer stack

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KW - Self-compliance

KW - Synaptic device

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Gradually modified conductance in the self-compliance region of an atomic-layer-deposited pt/tio2/hfalox/tin rram device

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Keywords

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