@inproceedings{55b7c9f851594116ac2903d99908367c,
title = "Graphene-based Embedded-Oxide-Trap Memory (gEOTM) for flexible electronics application",
abstract = "A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al 2O 3 gate oxide layer, in which an ion-bombarded AlO x layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory window (> 11.0 V), attributing to the effective electron-injection into the trap sites in AlO x. The results suggest that the gEOTM has potential applications for the high-density-memory devices and modules in flexible electronics.",
keywords = "flexible, graphene, memory, NVM",
author = "Kim, {Sung Min} and Sejoon Lee and Song, {Emil B.} and Sunae Seo and Seo, {David H.} and Wang, {Kang L.}",
year = "2012",
doi = "10.1109/ULIS.2012.6193346",
language = "English",
isbn = "9781467301916",
series = "2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012",
pages = "17--20",
booktitle = "2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012",
note = "2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 ; Conference date: 06-03-2012 Through 07-03-2012",
}