Graphene-based Embedded-Oxide-Trap Memory (gEOTM) for flexible electronics application

Sung Min Kim, Sejoon Lee, Emil B. Song, Sunae Seo, David H. Seo, Kang L. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

A The non-volatile gEOTMs are fabricated using a single-layer graphene (SLG) channel with an Al 2O 3 gate oxide layer, in which an ion-bombarded AlO x layer is intentionally formed by oxygen ion bombardment (OIB) to create the charge trap sites. The whole processes are carried out at temperature below 120°C to exploit gEOTM's compatibility to the flexible substrates. The devices shows a large memory window (> 11.0 V), attributing to the effective electron-injection into the trap sites in AlO x. The results suggest that the gEOTM has potential applications for the high-density-memory devices and modules in flexible electronics.

Original languageEnglish
Title of host publication2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Pages17-20
Number of pages4
DOIs
StatePublished - 2012
Event2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012 - Grenoble, France
Duration: 6 Mar 20127 Mar 2012

Publication series

Name2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012

Conference

Conference2012 13th International Conference on Ultimate Integration on Silicon, ULIS 2012
Country/TerritoryFrance
CityGrenoble
Period6/03/127/03/12

Keywords

  • flexible
  • graphene
  • memory
  • NVM

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