TY - JOUR
T1 - Graphene/lead-zirconate-titanate ferroelectric memory devices with tenacious retention characteristics
AU - Lee, Sejoon
AU - Lee, Youngmin
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2018/1
Y1 - 2018/1
N2 - With the motivation of realizing the high performance graphene-based nonvolatile memory devices, we fabricate and characterize reliable and robust ferroelectric field-effect transistor (FFETs), which are composed of single-layer graphene (SLG) and lead-zirconate-titanate (PZT). After completing all of the fabrication steps, the samples are annealed in vacuum to improve the device characteristics. Through systematic analyses, we investigate an optimal vacuum-annealing condition for improving the memory characteristics of the device. At annealing temperatures at 250–300 °C, both the electrical conduction properties of the SLG channel and the capacitive-coupling abilities of the SLG/PZT/Pt stack are dramatically improved because of the elimination of chemical residues and/or molecular oxygens. Consequently, the vacuum-annealed SLG-PZT FFET displays a great improvement of data retention (∼72% after 10 year) and a large memory window (∼4.1 V). We believe the present study can provide alternative avenues for exploring unprecedented graphene-based memory structures.
AB - With the motivation of realizing the high performance graphene-based nonvolatile memory devices, we fabricate and characterize reliable and robust ferroelectric field-effect transistor (FFETs), which are composed of single-layer graphene (SLG) and lead-zirconate-titanate (PZT). After completing all of the fabrication steps, the samples are annealed in vacuum to improve the device characteristics. Through systematic analyses, we investigate an optimal vacuum-annealing condition for improving the memory characteristics of the device. At annealing temperatures at 250–300 °C, both the electrical conduction properties of the SLG channel and the capacitive-coupling abilities of the SLG/PZT/Pt stack are dramatically improved because of the elimination of chemical residues and/or molecular oxygens. Consequently, the vacuum-annealed SLG-PZT FFET displays a great improvement of data retention (∼72% after 10 year) and a large memory window (∼4.1 V). We believe the present study can provide alternative avenues for exploring unprecedented graphene-based memory structures.
KW - Ferroelectric field-effect transistor
KW - Ferroelectric hysteresis
KW - Graphene
KW - Lead-zirconate-titanate
KW - Nonvolatile memory device
KW - Retention characteristics
UR - http://www.scopus.com/inward/record.url?scp=85031722164&partnerID=8YFLogxK
U2 - 10.1016/j.carbon.2017.10.005
DO - 10.1016/j.carbon.2017.10.005
M3 - Article
AN - SCOPUS:85031722164
SN - 0008-6223
VL - 126
SP - 176
EP - 182
JO - Carbon
JF - Carbon
ER -