TY - JOUR
T1 - Growth and characterization of lead selenide thin films
AU - Thanikaikarasan, Sethuramachandran
AU - Mahalingam, Thaiyan
AU - Dhanasekaran, V.
AU - Kathalingam, A.
AU - Rhee, Jin Koo
PY - 2012/8
Y1 - 2012/8
N2 - Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3COO) 2 and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.
AB - Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3COO) 2 and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.
UR - http://www.scopus.com/inward/record.url?scp=84864883350&partnerID=8YFLogxK
U2 - 10.1007/s10854-012-0629-5
DO - 10.1007/s10854-012-0629-5
M3 - Article
AN - SCOPUS:84864883350
SN - 0957-4522
VL - 23
SP - 1562
EP - 1568
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 8
ER -