Growth and characterization of lead selenide thin films

Sethuramachandran Thanikaikarasan; Thaiyan Mahalingam; V. Dhanasekaran; A. Kathalingam; Jin Koo Rhee

doi:10.1007/s10854-012-0629-5

Growth and characterization of lead selenide thin films

Sethuramachandran Thanikaikarasan
, Thaiyan Mahalingam
, V. Dhanasekaran
, A. Kathalingam
, Jin Koo Rhee

PSN College of Engineering and Technology
Alagappa University
Dongguk University

Research output: Contribution to journal › Article › peer-review

20 Scopus citations

Abstract

Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH ₃COO) ₂ and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.

Original language	English
Pages (from-to)	1562-1568
Number of pages	7
Journal	Journal of Materials Science: Materials in Electronics
Volume	23
Issue number	8
DOIs	https://doi.org/10.1007/s10854-012-0629-5
State	Published - Aug 2012

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title = "Growth and characterization of lead selenide thin films",

abstract = "Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3COO) 2 and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.",

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T1 - Growth and characterization of lead selenide thin films

AU - Thanikaikarasan, Sethuramachandran

AU - Mahalingam, Thaiyan

AU - Dhanasekaran, V.

AU - Kathalingam, A.

AU - Rhee, Jin Koo

PY - 2012/8

Y1 - 2012/8

N2 - Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3COO) 2 and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.

AB - Growth of lead selenide thin films has been carried out electrochemically on indium doped tin oxide coated conducting glass substrates from an aqueous acidic bath consists of Pb(CH 3COO) 2 and SeO2. X-ray diffraction analysis has been carried out to determine the crystal structure and phases of the deposited films. Microstructural parameters such as crystallite size, strain and dislocation density which have been evaluated from X-ray diffraction data. Surface morphology and film composition have been analyzed using scanning electron microscopy and energy dispersive analysis by X-rays. The effect of bath temperature on structural, microstructural, morphological and compositional properties of the films are studied and the results are discussed. Optical absorption measurements shows that the deposited films possess a direct band gap value of 0.38 eV.

UR - https://www.scopus.com/pages/publications/84864883350

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DO - 10.1007/s10854-012-0629-5

M3 - Article

AN - SCOPUS:84864883350

SN - 0957-4522

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SP - 1562

EP - 1568

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 8

ER -

Growth and characterization of lead selenide thin films

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