Growth and luminescent characteristics of ZnGa2O4 thin film phosphor prepared by radio frequency magnetron sputtering

Young Jin Kim, Young Ho Jeong, Kang Duk Kim, Seung Gu Kang, Ki Gang Lee, Jeong In Han, Yong Kuy Park, Kyong Ik Cho

Research output: Contribution to journalArticlepeer-review

14 Scopus citations

Abstract

ZnGa2O4 and doped ZnGa2O4 thin film phosphors were prepared by the rf magnetron sputtering method. Deposition parameters were controlled to characterize the deposition mechanism and structural changes. And then the relation between the structure and luminous properties was characterized. To observe the effects of the substrates, thin films were deposited on Si(100), Si(111), and indium-tin-oxide (ITO) coated glass substrates. The orientational transition was observed by varying the substrate temperature. The grain size of ZnGa2O4: Mn thin film deposited on a Si wafer was smaller than that on an ITO/glass substrate, which resulted in higher photoluminescence (PL) intensity. By heat treatment, PL intensity was increased because it eliminated the defects in films and improved the crystallinity.

Original languageEnglish
Pages (from-to)1239-1243
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume16
Issue number3
StatePublished - May 1998

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