Abstract
ZnGa2O4 and doped ZnGa2O4 thin film phosphors were prepared by rf magnetron sputtering method. Deposition parameters were controlled to characterize the deposition mechanism and structural changes. To observed the effects of the substrates, thin films were deposited on Si(100), Si(111), and ITO coated glass substrates. The orientational transition was observed by varying the substrate temperature. The grain size of ZnGa2O4:Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate, which resulted in higher PL intensity. By heat treatment, PL intensity was increased because it eliminated the defects in films and improved the crystallinity.
Original language | English |
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Pages | 658-662 |
Number of pages | 5 |
State | Published - 1997 |
Event | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea Duration: 17 Aug 1997 → 21 Aug 1997 |
Conference
Conference | Proceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 |
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City | Kyongju, Korea |
Period | 17/08/97 → 21/08/97 |