Growth and luminescent characteristics of ZnGa2O4 thin film phosphor prepared by rf magnetron sputtering

Young Ho Jeong, Kang Duk Kim, Jeong In Han, Yong Kuy Park, Kyong Ik Cho, Seung Gu Kang, Gi Kang Lee, Young Jin Kim

Research output: Contribution to conferencePaperpeer-review

Abstract

ZnGa2O4 and doped ZnGa2O4 thin film phosphors were prepared by rf magnetron sputtering method. Deposition parameters were controlled to characterize the deposition mechanism and structural changes. To observed the effects of the substrates, thin films were deposited on Si(100), Si(111), and ITO coated glass substrates. The orientational transition was observed by varying the substrate temperature. The grain size of ZnGa2O4:Mn thin film deposited on Si wafer was smaller than that on ITO/glass substrate, which resulted in higher PL intensity. By heat treatment, PL intensity was increased because it eliminated the defects in films and improved the crystallinity.

Original languageEnglish
Pages658-662
Number of pages5
StatePublished - 1997
EventProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97 - Kyongju, Korea
Duration: 17 Aug 199721 Aug 1997

Conference

ConferenceProceedings of the 1997 10th International Vacuum Microelectronics Conference, IVMC'97
CityKyongju, Korea
Period17/08/9721/08/97

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