Growth and optical properties on formation of self-assembled GaN nanorod grown on Si (111) substrates

Y. S. Park, C. M. Park, Hyunsik Im, S. J. Lee, T. W. Kang, S. H. Lee, J. E. Oh

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We have investigated the growth condition and optical properties on the formation of dislocation free vertical GaN nanorod grown on Si(111) substrates by molecular beam epitaxy. The hexagonal shape nanorod with lateral dimension from 10 nm to 350 nm is fully relaxed from lattice strain. We have found that the hexagonal nanorod can be formed on Si substrate, not only in N-rich condition but also even in a Ga-rich condition, when it is formed without buffer layer at high growth temperatures. They are fully relaxed and have a very good crystal quality characterized by extremely strong and narrow photoluminescence excitonic lines near 3.47 eV.

Original languageEnglish
Title of host publication2005 5th IEEE Conference on Nanotechnology
PublisherIEEE Computer Society
Pages499-502
Number of pages4
ISBN (Print)0780391993, 9780780391994
DOIs
StatePublished - 2005
Event2005 5th IEEE Conference on Nanotechnology - Nagoya, Japan
Duration: 11 Jul 200515 Jul 2005

Publication series

Name2005 5th IEEE Conference on Nanotechnology
Volume2

Conference

Conference2005 5th IEEE Conference on Nanotechnology
Country/TerritoryJapan
CityNagoya
Period11/07/0515/07/05

Keywords

  • Cathodoluminescence
  • Ga-rich
  • GaN nanorod
  • Molecular beam epitaxy
  • N-rich
  • Photoluminescence

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