Abstract
Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.
Original language | English |
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Pages (from-to) | 1678-1682 |
Number of pages | 5 |
Journal | Journal of the Korean Physical Society |
Volume | 62 |
Issue number | 11 |
DOIs | |
State | Published - Jun 2013 |
Keywords
- Field-effect transistor
- InAs nanowire
- Mobility
- MOCVD