Growth characteristics and electrical properties of diameter-selective InAs nanowires

Jae Cheol Shin, Ari Lee, Hyo Jin Kim, Jae Hun Kim, Kyoung Jin Choi, Young Hun Kim, Nam Kim, Myung Ho Bae, Ju Jin Kim, Bum Kyu Kim

Research output: Contribution to journalArticlepeer-review

10 Scopus citations

Abstract

Smaller-diameter semiconductor nanowires (NWs) are appropriate for electronic applications due to the lower leakage current and better field effect. However, the mobility of a NW gets smaller with decreasing diameter because surface scattering events of mobile carriers are increased. Therefore, the choice of a proper diameter is a key role for future high-performance transistors based on semiconductor NWs. Here, we control the diameters of catalyst-free InAs NWs grown at various growth temperatures by using metal-organic chemical vapor deposition to be in the range of 30 to 160 nm. The mobility of the fabricated InAs field-effect transistor increases with diameter and decreases with increasing temperature, which indicates that the surface scattering determines the electrical property of NWs.

Original languageEnglish
Pages (from-to)1678-1682
Number of pages5
JournalJournal of the Korean Physical Society
Volume62
Issue number11
DOIs
StatePublished - Jun 2013

Keywords

  • Field-effect transistor
  • InAs nanowire
  • Mobility
  • MOCVD

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