Growth-temperature induced metal-insulator transition in bamboo-shaped multiwalled carbon nanotubes

J. W. Jang; D. K. Lee; C. E. Lee; T. J. Lee; C. J. Lee; S. J. Noh

doi:10.1016/S0038-1098(02)00410-6

Growth-temperature induced metal-insulator transition in bamboo-shaped multiwalled carbon nanotubes

J. W. Jang, D. K. Lee, C. E. Lee, T. J. Lee, C. J. Lee, S. J. Noh

Division of System Semiconductor

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Temperature-dependent resistivity measurements were carried out on bamboo-shaped multiwalled carbon nanotubes (CNT) grown on cobalt-catalyst-deposited A1₂O₃/Ti substrates by a thermal chemical vapor deposition. The resistivity decreased with increasing growth temperature, and a reduced activation energy analysis showed that the CNT moved from the critical regime to the metallic regime with increasing growth temperature. The improved electrical conductivity with increasing growth temperature is attributed to the improved crystallinity and the increased diameters of the CNT.

Original language	English
Pages (from-to)	147-150
Number of pages	4
Journal	Solid State Communications
Volume	124
Issue number	4
DOIs	https://doi.org/10.1016/S0038-1098(02)00410-6
State	Published - Oct 2002

Keywords

A. Nanostructures
B. Thermal chemical vapor deposition
C. Scanning and transmission electron microscopy
D. Electronic transport

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10.1016/S0038-1098(02)00410-6

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title = "Growth-temperature induced metal-insulator transition in bamboo-shaped multiwalled carbon nanotubes",

abstract = "Temperature-dependent resistivity measurements were carried out on bamboo-shaped multiwalled carbon nanotubes (CNT) grown on cobalt-catalyst-deposited A12O3/Ti substrates by a thermal chemical vapor deposition. The resistivity decreased with increasing growth temperature, and a reduced activation energy analysis showed that the CNT moved from the critical regime to the metallic regime with increasing growth temperature. The improved electrical conductivity with increasing growth temperature is attributed to the improved crystallinity and the increased diameters of the CNT.",

keywords = "A. Nanostructures, B. Thermal chemical vapor deposition, C. Scanning and transmission electron microscopy, D. Electronic transport",

author = "Jang, {J. W.} and Lee, {D. K.} and Lee, {C. E.} and Lee, {T. J.} and Lee, {C. J.} and Noh, {S. J.}",

year = "2002",

month = oct,

doi = "10.1016/S0038-1098(02)00410-6",

language = "English",

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pages = "147--150",

journal = "Solid State Communications",

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T1 - Growth-temperature induced metal-insulator transition in bamboo-shaped multiwalled carbon nanotubes

AU - Jang, J. W.

AU - Lee, D. K.

AU - Lee, C. E.

AU - Lee, T. J.

AU - Lee, C. J.

AU - Noh, S. J.

PY - 2002/10

Y1 - 2002/10

N2 - Temperature-dependent resistivity measurements were carried out on bamboo-shaped multiwalled carbon nanotubes (CNT) grown on cobalt-catalyst-deposited A12O3/Ti substrates by a thermal chemical vapor deposition. The resistivity decreased with increasing growth temperature, and a reduced activation energy analysis showed that the CNT moved from the critical regime to the metallic regime with increasing growth temperature. The improved electrical conductivity with increasing growth temperature is attributed to the improved crystallinity and the increased diameters of the CNT.

AB - Temperature-dependent resistivity measurements were carried out on bamboo-shaped multiwalled carbon nanotubes (CNT) grown on cobalt-catalyst-deposited A12O3/Ti substrates by a thermal chemical vapor deposition. The resistivity decreased with increasing growth temperature, and a reduced activation energy analysis showed that the CNT moved from the critical regime to the metallic regime with increasing growth temperature. The improved electrical conductivity with increasing growth temperature is attributed to the improved crystallinity and the increased diameters of the CNT.

KW - A. Nanostructures

KW - B. Thermal chemical vapor deposition

KW - C. Scanning and transmission electron microscopy

KW - D. Electronic transport

UR - http://www.scopus.com/inward/record.url?scp=0036803465&partnerID=8YFLogxK

U2 - 10.1016/S0038-1098(02)00410-6

DO - 10.1016/S0038-1098(02)00410-6

M3 - Article

AN - SCOPUS:0036803465

SN - 0038-1098

VL - 124

SP - 147

EP - 150

JO - Solid State Communications

JF - Solid State Communications

IS - 4

ER -

Growth-temperature induced metal-insulator transition in bamboo-shaped multiwalled carbon nanotubes

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Keywords

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