Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Jae Cheol Shin; Parsian K. Mohseni; Ki Jun Yu; Stephanie Tomasulo; Kyle H. Montgomery; Minjoo L. Lee; John A. Rogers; Xiuling Li

doi:10.1021/nn304784y

Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

Jae Cheol Shin
, Parsian K. Mohseni
, Ki Jun Yu
, Stephanie Tomasulo
, Kyle H. Montgomery
, Minjoo L. Lee
, John A. Rogers
, Xiuling Li

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

41 Scopus citations

Abstract

We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an In_xGa _1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped In_xGa _1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid In_xGa_1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

Original language	English
Pages (from-to)	11074-11079
Number of pages	6
Journal	ACS Nano
Volume	6
Issue number	12
DOIs	https://doi.org/10.1021/nn304784y
State	Published - 21 Dec 2012

Keywords

MOCVD
nanowires
silicon
solar cells

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10.1021/nn304784y

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@article{3a757a60ab644b1dbce2865d2f675068,

title = "Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement",

abstract = "We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36\% in comparison to Si solar cells processed under the same condition without the NWs.",

keywords = "MOCVD, nanowires, silicon, solar cells",

author = "Shin, \{Jae Cheol\} and Mohseni, \{Parsian K.\} and Yu, \{Ki Jun\} and Stephanie Tomasulo and Montgomery, \{Kyle H.\} and Lee, \{Minjoo L.\} and Rogers, \{John A.\} and Xiuling Li",

year = "2012",

month = dec,

day = "21",

doi = "10.1021/nn304784y",

language = "English",

volume = "6",

pages = "11074--11079",

journal = "ACS Nano",

issn = "1936-0851",

publisher = "American Chemical Society",

number = "12",

}

TY - JOUR

T1 - Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

AU - Shin, Jae Cheol

AU - Mohseni, Parsian K.

AU - Yu, Ki Jun

AU - Tomasulo, Stephanie

AU - Montgomery, Kyle H.

AU - Lee, Minjoo L.

AU - Rogers, John A.

AU - Li, Xiuling

PY - 2012/12/21

Y1 - 2012/12/21

N2 - We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

AB - We demonstrate energy-conversion-efficiency (η) enhancement of silicon (Si) solar cells by the heterogeneous integration of an InxGa 1-xAs nanowire (NW) array on the rear surface. The NWs are grown via a catalyst-free, self-assembled method on Si(111) substrates using metalorganic chemical vapor deposition (MOCVD). Heavily p-doped InxGa 1-xAs (x ≈ 0.7) NW arrays are utilized as not only back-reflectors but also low bandgap rear-point-contacts of the Si solar cells. External quantum efficiency of the hybrid InxGa1-xAs NW-Si solar cell is increased over the entire solar response wavelength range; and η is enhanced by 36% in comparison to Si solar cells processed under the same condition without the NWs.

KW - MOCVD

KW - nanowires

KW - silicon

KW - solar cells

UR - https://www.scopus.com/pages/publications/84871533570

U2 - 10.1021/nn304784y

DO - 10.1021/nn304784y

M3 - Article

AN - SCOPUS:84871533570

SN - 1936-0851

VL - 6

SP - 11074

EP - 11079

JO - ACS Nano

JF - ACS Nano

IS - 12

ER -

Heterogeneous integration of InGaAs nanowires on the rear surface of Si solar cells for efficiency enhancement

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Keywords

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