HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

S. Mallik; C. Mahata; M. K. Hota; G. K. Dalapati; D. Z. Chi; C. K. Sarkar; C. K. Maiti

doi:10.1016/j.mee.2010.02.009

HfAlO_x high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

S. Mallik, C. Mahata, M. K. Hota, G. K. Dalapati, D. Z. Chi, C. K. Sarkar, C. K. Maiti

Department of Electronics & Electrical Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Ultra thin HfAlO_x high-k gate dielectric has been deposited directly on Si_1-xxGe_x by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlO_x gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlO_x (E_g = 6.2 eV) and Si_1-x _xGe_x (E_g = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlO_x/SiGe gate stacks were characterized by constant voltage stressing (CVS).

Original language	English
Pages (from-to)	2234-2240
Number of pages	7
Journal	Microelectronic Engineering
Volume	87
Issue number	11
DOIs	https://doi.org/10.1016/j.mee.2010.02.009
State	Published - Nov 2010

Keywords

Band offset
HfAlO
High-k gate dielectrics
Interface
SiGe

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title = "HfAlOx high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties",

abstract = "Ultra thin HfAlOx high-k gate dielectric has been deposited directly on Si1-xxGex by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlOx gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlOx (Eg = 6.2 eV) and Si1-x xGex (Eg = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlOx/SiGe gate stacks were characterized by constant voltage stressing (CVS).",

keywords = "Band offset, HfAlO, High-k gate dielectrics, Interface, SiGe",

author = "S. Mallik and C. Mahata and Hota, {M. K.} and Dalapati, {G. K.} and Chi, {D. Z.} and Sarkar, {C. K.} and Maiti, {C. K.}",

year = "2010",

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doi = "10.1016/j.mee.2010.02.009",

language = "English",

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T2 - Interfacial reaction, energy-band alignment, and charge trapping properties

AU - Mallik, S.

AU - Mahata, C.

AU - Hota, M. K.

AU - Dalapati, G. K.

AU - Chi, D. Z.

AU - Sarkar, C. K.

AU - Maiti, C. K.

PY - 2010/11

Y1 - 2010/11

N2 - Ultra thin HfAlOx high-k gate dielectric has been deposited directly on Si1-xxGex by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlOx gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlOx (Eg = 6.2 eV) and Si1-x xGex (Eg = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlOx/SiGe gate stacks were characterized by constant voltage stressing (CVS).

AB - Ultra thin HfAlOx high-k gate dielectric has been deposited directly on Si1-xxGex by RF sputter deposition. The interfacial chemical structure and energy-band discontinuities were studied by using X-ray photoelectron spectroscopy (XPS), time of flight secondary ion mass spectroscopy (TOF-SIMS) and electrical measurements. It is found that the sputtered deposited HfAlOx gate dielectric on SiGe exhibits excellent electrical properties with low interface state density, hysteresis voltage, and frequency dispersion. The effective valence and conduction band offsets between HfAlOx (Eg = 6.2 eV) and Si1-x xGex (Eg = 1.04 eV) were found to be 3.11 eV and 2.05 eV, respectively. In addition, the charge trapping properties of HfAlOx/SiGe gate stacks were characterized by constant voltage stressing (CVS).

KW - Band offset

KW - HfAlO

KW - High-k gate dielectrics

KW - Interface

KW - SiGe

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JO - Microelectronic Engineering

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IS - 11

ER -

HfAlO_x high-k gate dielectric on SiGe: Interfacial reaction, energy-band alignment, and charge trapping properties

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Keywords

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