Abstract
We have systematically studied the effect of a Ga(In)As insertion layer (IL) on the optical and structural properties of InAs quantum dot (QD) structures. A high density of 1.1 × 10 11 cm -2 of InAs QDs with a Ga(In)As IL has been achieved on a GaAs (100) substrate by metal organic chemical vapor deposition. A photoluminescence linewidth of 27 meV from these QDs has been obtained. We attribute the high density and high uniformity of these QDs to the use of the IL. Our results suggest a method for obtaining high quality InAs QD structures for devices with a 1.3 μm operation wavelength.
Original language | English |
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Pages (from-to) | S669-S672 |
Journal | Journal of the Korean Physical Society |
Volume | 45 |
Issue number | SUPPL. |
State | Published - Dec 2004 |
Keywords
- Ga(In)as insertion layer
- High density and high uniformity dots
- InAs quantum dots photoluminescence
- Insertion layer
- Quantum dot