High density and high uniformity InAs/AIAs QDs by using insertion layer

S. K. Park, J. Tatebayashi, Y. Arakawa, C. J. Park, H. Y. Cho

Research output: Contribution to journalArticlepeer-review

Abstract

We have systematically studied the effect of a Ga(In)As insertion layer (IL) on the optical and structural properties of InAs quantum dot (QD) structures. A high density of 1.1 × 10 11 cm -2 of InAs QDs with a Ga(In)As IL has been achieved on a GaAs (100) substrate by metal organic chemical vapor deposition. A photoluminescence linewidth of 27 meV from these QDs has been obtained. We attribute the high density and high uniformity of these QDs to the use of the IL. Our results suggest a method for obtaining high quality InAs QD structures for devices with a 1.3 μm operation wavelength.

Original languageEnglish
Pages (from-to)S669-S672
JournalJournal of the Korean Physical Society
Volume45
Issue numberSUPPL.
StatePublished - Dec 2004

Keywords

  • Ga(In)as insertion layer
  • High density and high uniformity dots
  • InAs quantum dots photoluminescence
  • Insertion layer
  • Quantum dot

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