Abstract
We present the DC and RF characteristics of 0.1 μm gate length InGaAs/InAlAs/GaAs metamorphic high electron mobility transistors (MHEMTs). Depletion-mode MHEMTs with Γ-shaped off-set gates (70 μm. in width and 2 fingers) were fabricated using a double heterostructure epitaxial structure and were characterized through DC and RF measurements. The measured channel current density and transconductance (gm) were 442 mA/mm and 421 mS/mm, respectively. From RF measurements, 154 and 454 GHz were obtained for the cut-off frequency (fT) and the maximum frequency of oscillation (fmax), respectively. The superior fmax of 454 GHz achieved in the work is one of the first reports among fabricated 0.1 μm. gate length MHEMTs. A very low noise figure of less than ∼3 dB was also achieved in a frequency range of 50 ∼ 62 GHz.
Original language | English |
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Pages (from-to) | 427-430 |
Number of pages | 4 |
Journal | Journal of the Korean Physical Society |
Volume | 43 |
Issue number | 3 |
State | Published - Sep 2003 |
Keywords
- Fmax
- MHEMT