High-mobility and high-stability ZnON thin-film transistors for next-generation display applications

Yang Soo Kim, Jong Hearn Kim, Hyun Suk Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

In order to improve the performances of zinc oxynitride thin-film transistors, heat treatment conditions of ZnON semiconductors were investigated in this work. Thin film properties and the resulting TFT performances including the device stability were evaluated. High-stability ZnON devices with ultra-high field-effect mobility (UFE) values exceeding 50 cm2/Vs were achieved.

Original languageEnglish
Title of host publication22nd International Display Workshops, IDW 2015
PublisherInternational Display Workshops
Pages150-151
Number of pages2
ISBN (Electronic)9781510845503
StatePublished - 2015
Event22nd International Display Workshops, IDW 2015 - Otsu, Japan
Duration: 9 Dec 201511 Dec 2015

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference22nd International Display Workshops, IDW 2015
Country/TerritoryJapan
CityOtsu
Period9/12/1511/12/15

Keywords

  • High mobility
  • High stability
  • Reactive sputtering
  • Thin film transistors
  • Zinc oxynitride

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