Abstract
In order to improve the performances of zinc oxynitride thin-film transistors, heat treatment conditions of ZnON semiconductors were investigated in this work. Thin film properties and the resulting TFT performances including the device stability were evaluated. High-stability ZnON devices with ultra-high field-effect mobility (ufe) values exceeding 50 cm2/Vs were achieved.
| Original language | English |
|---|---|
| Title of host publication | 22nd International Display Workshops, IDW 2015 |
| Publisher | International Display Workshops |
| Pages | 676-677 |
| Number of pages | 2 |
| ISBN (Electronic) | 9781510845503 |
| State | Published - 2015 |
| Event | 22nd International Display Workshops, IDW 2015 - Otsu, Japan Duration: 9 Dec 2015 → 11 Dec 2015 |
Publication series
| Name | Proceedings of the International Display Workshops |
|---|---|
| Volume | 2 |
| ISSN (Print) | 1883-2490 |
Conference
| Conference | 22nd International Display Workshops, IDW 2015 |
|---|---|
| Country/Territory | Japan |
| City | Otsu |
| Period | 9/12/15 → 11/12/15 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 3 Good Health and Well-being
Keywords
- High mobility
- High stability
- Reactive sputtering
- Thin film transistors
- Zinc oxynitride
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