Abstract
We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.
Original language | English |
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Pages (from-to) | 3177-3183 |
Number of pages | 7 |
Journal | Journal of Electronic Materials |
Volume | 43 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2014 |
Keywords
- high mobility
- oxide semiconductor
- Silicon-doped InSnO
- stability
- thin-film transistor