High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors

T. W. Seo, Hyun Suk Kim, Kwang Ho Lee, Kwun Bum Chung, Jin Seong Park

Research output: Contribution to journalArticlepeer-review

7 Scopus citations

Abstract

We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

Original languageEnglish
Pages (from-to)3177-3183
Number of pages7
JournalJournal of Electronic Materials
Volume43
Issue number9
DOIs
StatePublished - Sep 2014

Keywords

  • high mobility
  • oxide semiconductor
  • Silicon-doped InSnO
  • stability
  • thin-film transistor

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