High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors

T. W. Seo; Hyun Suk Kim; Kwang Ho Lee; Kwun Bum Chung; Jin Seong Park

doi:10.1007/s11664-014-3211-5

High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors

T. W. Seo
, Hyun Suk Kim
, Kwang Ho Lee
, Kwun Bum Chung
, Jin Seong Park

Hanyang University

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm²/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm²/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

Original language	English
Pages (from-to)	3177-3183
Number of pages	7
Journal	Journal of Electronic Materials
Volume	43
Issue number	9
DOIs	https://doi.org/10.1007/s11664-014-3211-5
State	Published - Sep 2014

Keywords

high mobility
oxide semiconductor
Silicon-doped InSnO
stability
thin-film transistor

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10.1007/s11664-014-3211-5

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@article{07457494ef69475498c7dd6132a41345,

title = "High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors",

abstract = "We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.\% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.\% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.",

keywords = "high mobility, oxide semiconductor, Silicon-doped InSnO, stability, thin-film transistor",

author = "Seo, \{T. W.\} and Kim, \{Hyun Suk\} and Lee, \{Kwang Ho\} and Chung, \{Kwun Bum\} and Park, \{Jin Seong\}",

year = "2014",

month = sep,

doi = "10.1007/s11664-014-3211-5",

language = "English",

volume = "43",

pages = "3177--3183",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer New York",

number = "9",

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TY - JOUR

T1 - High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors

AU - Seo, T. W.

AU - Kim, Hyun Suk

AU - Lee, Kwang Ho

AU - Chung, Kwun Bum

AU - Park, Jin Seong

PY - 2014/9

Y1 - 2014/9

N2 - We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

AB - We report the fabrication of high-performance thin-film transistors (TFTs) with an amorphous silicon indium tin oxide (a-SITO) channel, which was deposited by cosputtering a silicon dioxide and an indium tin oxide target. The effect of the silicon doping on the device performance and stability of the a-SITO TFTs was investigated. The field-effect mobility and stability under positive bias stress of the a-SITO TFTs with optimized Si content (0.22 at.% Si) dramatically improved to 28.7 cm2/Vs and 1.5 V shift of threshold voltage, respectively, compared with the values (0.72 cm2/Vs and 8.9 V shift) for a-SITO TFTs with 4.22 at.% Si. The role of silicon in a-SITO TFTs is discussed based on various physical and chemical analyses, including x-ray absorption spectroscopy, x-ray photoelectron spectroscopy, and spectroscopic ellipsometry measurements.

KW - high mobility

KW - oxide semiconductor

KW - Silicon-doped InSnO

KW - stability

KW - thin-film transistor

UR - https://www.scopus.com/pages/publications/84906322834

U2 - 10.1007/s11664-014-3211-5

DO - 10.1007/s11664-014-3211-5

M3 - Article

AN - SCOPUS:84906322834

SN - 0361-5235

VL - 43

SP - 3177

EP - 3183

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

IS - 9

ER -

High mobility and stability of thin-film transistors using silicon-doped amorphous indium tin oxide semiconductors

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Keywords

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