@inproceedings{8c7dffb94c9a4a7fad5a7edecd4142ea,
title = "High mobility p-type tin oxide thin-film by adopting passivation layer",
abstract = "The effects of SiO2 passivation on tin monoxide (SnO) semiconductor was investigated. In X-ray photoelectron spectroscopy studies revealed that the tail-state above valence band maximum was clearly detected in SiO2-capped SnO film which may improve the p-type conductivity. As a result, the resulting SnO thin-film transistors show enhanced electrical properties.",
keywords = "P-type SnO, Thin-film transistors SiO passivation",
author = "Ahn, {Sonq Yi} and Kim, {Hyun Suk}",
note = "Publisher Copyright: {\textcopyright} 2019 ITE and SID.; 26th International Display Workshops, IDW 2019 ; Conference date: 27-11-2019 Through 29-11-2019",
year = "2019",
language = "English",
series = "Proceedings of the International Display Workshops",
publisher = "International Display Workshops",
pages = "573--576",
booktitle = "26th International Display Workshops, IDW 2019",
}