@inproceedings{c3880d9cf87c42c09c6f1c24c356d3db,
title = "High mobility zinc oxynitride-TFT with operation stability under light-illuminated bias-stress conditions for large area and high resolution display applications",
abstract = "In spite of the successful achievement of oxide-semiconductor (OS) technology in recent years, stability degradation especially at high mobility regime limits the application of oxide semiconductors in next generation displays. According to previous works, the instability is closely related to oxygen vacancies (Vo) causing persistent photoconductivity (PPC) [1,2]. From this point of view, zinc oxynitride (ZnON)[3] with small bandgap (1.3 eV) and high intrinsic mobility is attractive to overcome the performance issues of OS. In this paper, we report on ZnON-thin film transistors (TFTs) with field effect mobility near 100 cm2/Vs and operation stability(< 3 V) under light-illumination bias-stress. Our results demonstrate that ZnON-TFTs are strong candidates for pixel switching devices in ultra-high definition and large area displays.",
author = "Myungkwan Ryu and Kim, {Tae Sang} and Son, {Kyoung Seok} and Kim, {Hyun Suk} and Park, {Joon Seok} and Seon, {Jong Baek} and Seo, {Seok Jun} and Kim, {Sun Jae} and Eunha Lee and Hyungik Lee and Jeon, {Sang Ho} and Seungwu Han and Lee, {Sang Yoon}",
year = "2012",
doi = "10.1109/IEDM.2012.6478986",
language = "English",
isbn = "9781467348706",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "5.6.1--5.6.3",
booktitle = "2012 IEEE International Electron Devices Meeting, IEDM 2012",
note = "2012 IEEE International Electron Devices Meeting, IEDM 2012 ; Conference date: 10-12-2012 Through 13-12-2012",
}