High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications

  • Joon Seok Park
  • , Hyun Suk Kim
  • , Tae Sang Kim
  • , Kyoung Seok Son
  • , Jong Baek Seon
  • , Seok Jun Seo
  • , Sun Jae Kim
  • , Myungkwan Ryu
  • , Sangyoon Lee

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compounds is presented. Devices with field effect mobility values exceeding 50 cm2/Vs are routinely achieved, which makes them suitable as switching or driving elements in next generation flat panel displays.

Original languageEnglish
Title of host publicationSociety for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages269-271
Number of pages3
StatePublished - 2012
Event19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan
Duration: 4 Dec 20127 Dec 2012

Publication series

NameProceedings of the International Display Workshops
Volume1
ISSN (Print)1883-2490

Conference

Conference19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/TerritoryJapan
CityKyoto
Period4/12/127/12/12

Keywords

  • Flat Panel Display
  • Oxynitride
  • TFT

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