High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications

Joon Seok Park; Hyun Suk Kim; Tae Sang Kim; Kyoung Seok Son; Jong Baek Seon; Seok Jun Seo; Sun Jae Kim; Myungkwan Ryu; Sangyoon Lee

High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications

Joon Seok Park
, Hyun Suk Kim
, Tae Sang Kim
, Kyoung Seok Son
, Jong Baek Seon
, Seok Jun Seo
, Sun Jae Kim
, Myungkwan Ryu
, Sangyoon Lee

Department of Energy and Materials Engineering

Samsung

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compounds is presented. Devices with field effect mobility values exceeding 50 cm²/Vs are routinely achieved, which makes them suitable as switching or driving elements in next generation flat panel displays.

Original language	English
Title of host publication	Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012
Pages	269-271
Number of pages	3
State	Published - 2012
Event	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 - Kyoto, Japan Duration: 4 Dec 2012 → 7 Dec 2012

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012
Country/Territory	Japan
City	Kyoto
Period	4/12/12 → 7/12/12

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Flat Panel Display
Oxynitride
TFT

Cite this

Park, J. S., Kim, H. S., Kim, T. S., Son, K. S., Seon, J. B., Seo, S. J., Kim, S. J., Ryu, M., & Lee, S. (2012). High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications. In Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012 (pp. 269-271). (Proceedings of the International Display Workshops; Vol. 1).

@inproceedings{9ca1f6b135e144a5a0145002e8f42591,

title = "High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications",

abstract = "The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compounds is presented. Devices with field effect mobility values exceeding 50 cm2/Vs are routinely achieved, which makes them suitable as switching or driving elements in next generation flat panel displays.",

keywords = "Flat Panel Display, Oxynitride, TFT",

author = "Park, \{Joon Seok\} and Kim, \{Hyun Suk\} and Kim, \{Tae Sang\} and Son, \{Kyoung Seok\} and Seon, \{Jong Baek\} and Seo, \{Seok Jun\} and Kim, \{Sun Jae\} and Myungkwan Ryu and Sangyoon Lee",

year = "2012",

language = "English",

isbn = "9781627486521",

series = "Proceedings of the International Display Workshops",

pages = "269--271",

booktitle = "Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012",

note = "19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012 ; Conference date: 04-12-2012 Through 07-12-2012",

}

Park, JS, Kim, HS, Kim, TS, Son, KS, Seon, JB, Seo, SJ, Kim, SJ, Ryu, M & Lee, S 2012, High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications. in Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. Proceedings of the International Display Workshops, vol. 1, pp. 269-271, 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012, Kyoto, Japan, 4/12/12.

High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications. / Park, Joon Seok; Kim, Hyun Suk; Kim, Tae Sang et al.
Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012. 2012. p. 269-271 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications

AU - Park, Joon Seok

AU - Kim, Hyun Suk

AU - Kim, Tae Sang

AU - Son, Kyoung Seok

AU - Seon, Jong Baek

AU - Seo, Seok Jun

AU - Kim, Sun Jae

AU - Ryu, Myungkwan

AU - Lee, Sangyoon

PY - 2012

Y1 - 2012

N2 - The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compounds is presented. Devices with field effect mobility values exceeding 50 cm2/Vs are routinely achieved, which makes them suitable as switching or driving elements in next generation flat panel displays.

AB - The fabrication of thin-film transistor devices incorporating active semiconductors based on zinc oxynitride (ZnON) compounds is presented. Devices with field effect mobility values exceeding 50 cm2/Vs are routinely achieved, which makes them suitable as switching or driving elements in next generation flat panel displays.

KW - Flat Panel Display

KW - Oxynitride

KW - TFT

UR - https://www.scopus.com/pages/publications/84885923780

M3 - Conference contribution

AN - SCOPUS:84885923780

SN - 9781627486521

T3 - Proceedings of the International Display Workshops

SP - 269

EP - 271

BT - Society for Information Display - 19th International Display Workshops 2012, IDW/AD 2012

T2 - 19th International Display Workshops in Conjunction with Asia Display 2012, IDW/AD 2012

Y2 - 4 December 2012 through 7 December 2012

ER -

High mobility zinc Oxynitride (ZnON) based thin-film transistors (TFTs) for display applications

Abstract

Publication series

Conference

UN SDGs

Keywords

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Cite this