High performance and stability of double-gate HfInZnO thin-film transistors under illumination

Joon Seok Park; Kyoung Seok Son; Tae Sang Kim; Ji Sim Jung; Kwang Hee Lee; Wan Joo Maeng; Hyun Suk Kim; Eok Su Kim; Kyung Bae Park; Jong Baek Seon; Jang Yeon Kwon; Myung Kwan Ryu; Sangyun Lee

doi:10.1109/LED.2010.2051407

High performance and stability of double-gate HfInZnO thin-film transistors under illumination

Joon Seok Park, Kyoung Seok Son, Tae Sang Kim, Ji Sim Jung, Kwang Hee Lee, Wan Joo Maeng, Hyun Suk Kim, Eok Su Kim, Kyung Bae Park, Jong Baek Seon, Jang Yeon Kwon, Myung Kwan Ryu, Sangyun Lee

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

Original language	English
Article number	5503991
Pages (from-to)	960-962
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	9
DOIs	https://doi.org/10.1109/LED.2010.2051407
State	Published - Sep 2010

Keywords

Double gate
hafnium indium zinc oxide (HIZO)
thin-film transistor (TFT)

Access to Document

10.1109/LED.2010.2051407

Cite this

@article{33b4ba5f0fc246ada812142de1001064,

title = "High performance and stability of double-gate HfInZnO thin-film transistors under illumination",

abstract = "Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.",

keywords = "Double gate, hafnium indium zinc oxide (HIZO), thin-film transistor (TFT)",

author = "Park, {Joon Seok} and Son, {Kyoung Seok} and Kim, {Tae Sang} and Jung, {Ji Sim} and Lee, {Kwang Hee} and Maeng, {Wan Joo} and Kim, {Hyun Suk} and Kim, {Eok Su} and Park, {Kyung Bae} and Seon, {Jong Baek} and Kwon, {Jang Yeon} and Ryu, {Myung Kwan} and Sangyun Lee",

year = "2010",

month = sep,

doi = "10.1109/LED.2010.2051407",

language = "English",

volume = "31",

pages = "960--962",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "9",

}

TY - JOUR

T1 - High performance and stability of double-gate HfInZnO thin-film transistors under illumination

AU - Park, Joon Seok

AU - Son, Kyoung Seok

AU - Kim, Tae Sang

AU - Jung, Ji Sim

AU - Lee, Kwang Hee

AU - Maeng, Wan Joo

AU - Kim, Hyun Suk

AU - Kim, Eok Su

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Kwon, Jang Yeon

AU - Ryu, Myung Kwan

AU - Lee, Sangyun

PY - 2010/9

Y1 - 2010/9

N2 - Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

AB - Hafnium indium zinc oxide thin-film transistors (TFTs) with a double-gate structure were evaluated for the first time. Compared with devices with a single bottom gate, TFTs with an additional top gate exhibit improved subthreshold swing, threshold voltage, and field-effect mobility, as well as smaller subthreshold currents upon exposure to visible light. This phenomenon is attributed to the more effective suppression of excess photocurrents by the application of a double-gate structure. Negative-bias stress experiments under illumination indicate that the double-gate TFT exhibits very high stability compared with the device with a single-gate configuration.

KW - Double gate

KW - hafnium indium zinc oxide (HIZO)

KW - thin-film transistor (TFT)

UR - http://www.scopus.com/inward/record.url?scp=77956176286&partnerID=8YFLogxK

U2 - 10.1109/LED.2010.2051407

DO - 10.1109/LED.2010.2051407

M3 - Article

AN - SCOPUS:77956176286

SN - 0741-3106

VL - 31

SP - 960

EP - 962

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 9

M1 - 5503991

ER -

High performance and stability of double-gate HfInZnO thin-film transistors under illumination

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this