High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

Joon Seok Park; Tae Sang Kim; Kyoung Seok Son; Kwang Hee Lee; Ji Sim Jung; Wan Joo Maeng; Hyun Suk Kim; Eok Su Kim; Kyung Bae Park; Jong Baek Seon; Jang Yeon Kwon; Myung Kwan Ryu; Sangyoon Lee

doi:10.1109/LED.2010.2065793

High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

Joon Seok Park
, Tae Sang Kim
, Kyoung Seok Son
, Kwang Hee Lee
, Ji Sim Jung
, Wan Joo Maeng
, Hyun Suk Kim
, Eok Su Kim
, Kyung Bae Park
, Jong Baek Seon
, Jang Yeon Kwon
, Myung Kwan Ryu
, Sangyoon Lee

Department of Energy and Materials Engineering

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiO_x etch stopper (ES) grown at 150 °C, a double ES with a second SiO_x film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiO_x protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.

Original language	English
Article number	5565390
Pages (from-to)	1248-1250
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	11
DOIs	https://doi.org/10.1109/LED.2010.2065793
State	Published - Nov 2010

Keywords

Etch stopper (ES)
hafnium indium zinc oxide (HIZO)
thin-film transistor (TFT)

Access to Document

10.1109/LED.2010.2065793

Cite this

Park, J. S., Kim, T. S., Son, K. S., Lee, K. H., Jung, J. S., Maeng, W. J., Kim, H. S., Kim, E. S., Park, K. B., Seon, J. B., Kwon, J. Y., Ryu, M. K., & Lee, S. (2010). High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer. IEEE Electron Device Letters, 31(11), 1248-1250. Article 5565390. https://doi.org/10.1109/LED.2010.2065793

@article{57ec7898a4a942aaa1bbd10ce16b8b2a,

title = "High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer",

abstract = "Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiOx etch stopper (ES) grown at 150 °C, a double ES with a second SiOx film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiOx protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.",

keywords = "Etch stopper (ES), hafnium indium zinc oxide (HIZO), thin-film transistor (TFT)",

author = "Park, \{Joon Seok\} and Kim, \{Tae Sang\} and Son, \{Kyoung Seok\} and Lee, \{Kwang Hee\} and Jung, \{Ji Sim\} and Maeng, \{Wan Joo\} and Kim, \{Hyun Suk\} and Kim, \{Eok Su\} and Park, \{Kyung Bae\} and Seon, \{Jong Baek\} and Kwon, \{Jang Yeon\} and Ryu, \{Myung Kwan\} and Sangyoon Lee",

year = "2010",

month = nov,

doi = "10.1109/LED.2010.2065793",

language = "English",

volume = "31",

pages = "1248--1250",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

AU - Park, Joon Seok

AU - Kim, Tae Sang

AU - Son, Kyoung Seok

AU - Lee, Kwang Hee

AU - Jung, Ji Sim

AU - Maeng, Wan Joo

AU - Kim, Hyun Suk

AU - Kim, Eok Su

AU - Park, Kyung Bae

AU - Seon, Jong Baek

AU - Kwon, Jang Yeon

AU - Ryu, Myung Kwan

AU - Lee, Sangyoon

PY - 2010/11

Y1 - 2010/11

N2 - Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiOx etch stopper (ES) grown at 150 °C, a double ES with a second SiOx film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiOx protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.

AB - Transparent hafnium indium zinc oxide thin-film transistors adopting single- and double-etch-stopper layers were evaluated. Compared to devices with a single SiOx etch stopper (ES) grown at 150 °C, a double ES with a second SiOx film grown at 350 °C provides a superior device performance such as improved subthreshold swing, threshold voltage, field effect mobility, and higher stability under a negative bias stress. The stretched-exponential analyses of the bias stress results indicate that the denser high-temperature SiOx protects more effectively the underlying semiconductor during the source/drain etch process and suppresses the generation of defect states therein.

KW - Etch stopper (ES)

KW - hafnium indium zinc oxide (HIZO)

KW - thin-film transistor (TFT)

UR - https://www.scopus.com/pages/publications/78049299108

U2 - 10.1109/LED.2010.2065793

DO - 10.1109/LED.2010.2065793

M3 - Article

AN - SCOPUS:78049299108

SN - 0741-3106

VL - 31

SP - 1248

EP - 1250

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

M1 - 5565390

ER -

High-performance and stable transparent HfInZnO thin-film transistors with a double-etch-stopper layer

Abstract

Keywords

Access to Document

Other files and links

Fingerprint

Cite this