@inproceedings{5d98469bf8204b4d95440bf4a38d3d7f,
title = "High performance gallium-zinc oxynitride thin film transistors for next-generation display applications",
abstract = "High speed thin film transistors (TFTs) are in great need for next-generation TVs which will employ ultra high definition resolution (3840×2160) panels and possibly include multi-view autostereoscopic 3D technology which will negate the use of glasses for 3D viewing mode. In order to achieve high mobility devices, various types of metal oxide semiconductors have been extensively studied, including the most popular In-Ga-Zn-O, with typical field effect mobilities ranging between 10 to 30 cm2/Vs. Although these numbers are much higher than that of conventional amorphous silicon (0.5∼1.0 cm2/Vs) TFTs, there is a strong demand for even higher mobility semiconductors which can exhibit excellent uniformity over a large area.",
author = "Kim, {Tae Sang} and Kim, {Hyun Suk} and Park, {Joon Seok} and Son, {Kyoung Seok} and Kim, {Eok Su} and Seon, {Jong Baek} and Sunhee Lee and Seo, {Seok Jun} and Kim, {Sun Jae} and Sungwoo Jun and Lee, {Kyung Min} and Shin, {Dong Jae} and Jaewook Lee and Chunhyung Jo and Choi, {Sung Jin} and Kim, {Dong Myong} and Kim, {Dae Hwan} and Myungkwan Ryu and Cho, {Seong Ho} and Youngsoo Park",
year = "2013",
doi = "10.1109/IEDM.2013.6724701",
language = "English",
isbn = "9781479923076",
series = "Technical Digest - International Electron Devices Meeting, IEDM",
pages = "27.1.1--27.1.3",
booktitle = "2013 IEEE International Electron Devices Meeting, IEDM 2013",
note = "2013 IEEE International Electron Devices Meeting, IEDM 2013 ; Conference date: 09-12-2013 Through 11-12-2013",
}