High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature

Seong Cheol Jang; Hyoung Do Kim; Hyun Suk Kim

High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature

Seong Cheol Jang
, Hyoung Do Kim
, Hyun Suk Kim

Department of Energy and Materials Engineering

Chungnam National University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, to fabricate low temperature processed high performance amorphous InGaZnO thin film transistors (a-IGZO TFTs), microwave and electron beam annealing process were investigated. It is shown that both annealing process are suitable to replace high temperature (>300°C) annealing.

Original language	English
Title of host publication	25th International Display Workshops, IDW 2018
Publisher	International Display Workshops
Pages	337-339
Number of pages	3
ISBN (Electronic)	9781510883918
State	Published - 2018
Event	25th International Display Workshops, IDW 2018 - Nagoya, Japan Duration: 12 Dec 2018 → 14 Dec 2018

Publication series

Name	Proceedings of the International Display Workshops
Volume	1
ISSN (Print)	1883-2490

Conference

Conference	25th International Display Workshops, IDW 2018
Country/Territory	Japan
City	Nagoya
Period	12/12/18 → 14/12/18

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 3 Good Health and Well-being

Keywords

Annealing
In-Ga-Zn-O (IGZO)
Thin film transistor

Cite this

@inproceedings{a22c38e84e9946a0a722315877720dc7,

title = "High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature",

abstract = "In this work, to fabricate low temperature processed high performance amorphous InGaZnO thin film transistors (a-IGZO TFTs), microwave and electron beam annealing process were investigated. It is shown that both annealing process are suitable to replace high temperature (>300°C) annealing.",

keywords = "Annealing, In-Ga-Zn-O (IGZO), Thin film transistor",

author = "Jang, \{Seong Cheol\} and Kim, \{Hyoung Do\} and Kim, \{Hyun Suk\}",

note = "Publisher Copyright: {\textcopyright} 2018 International Display Workshops. All rights reserved.; 25th International Display Workshops, IDW 2018 ; Conference date: 12-12-2018 Through 14-12-2018",

year = "2018",

language = "English",

series = "Proceedings of the International Display Workshops",

publisher = "International Display Workshops",

pages = "337--339",

booktitle = "25th International Display Workshops, IDW 2018",

}

Jang, SC, Kim, HD & Kim, HS 2018, High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature. in 25th International Display Workshops, IDW 2018. Proceedings of the International Display Workshops, vol. 1, International Display Workshops, pp. 337-339, 25th International Display Workshops, IDW 2018, Nagoya, Japan, 12/12/18.

High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature. / Jang, Seong Cheol; Kim, Hyoung Do; Kim, Hyun Suk.
25th International Display Workshops, IDW 2018. International Display Workshops, 2018. p. 337-339 (Proceedings of the International Display Workshops; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature

AU - Jang, Seong Cheol

AU - Kim, Hyoung Do

AU - Kim, Hyun Suk

PY - 2018

Y1 - 2018

N2 - In this work, to fabricate low temperature processed high performance amorphous InGaZnO thin film transistors (a-IGZO TFTs), microwave and electron beam annealing process were investigated. It is shown that both annealing process are suitable to replace high temperature (>300°C) annealing.

AB - In this work, to fabricate low temperature processed high performance amorphous InGaZnO thin film transistors (a-IGZO TFTs), microwave and electron beam annealing process were investigated. It is shown that both annealing process are suitable to replace high temperature (>300°C) annealing.

KW - Annealing

KW - In-Ga-Zn-O (IGZO)

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/85072110592

M3 - Conference contribution

AN - SCOPUS:85072110592

T3 - Proceedings of the International Display Workshops

SP - 337

EP - 339

BT - 25th International Display Workshops, IDW 2018

PB - International Display Workshops

T2 - 25th International Display Workshops, IDW 2018

Y2 - 12 December 2018 through 14 December 2018

ER -

High performance In-Ga-Zn-O thin-film transistors via microwave and electron-beam radiation at room temperature

Abstract

Publication series

Conference

UN SDGs

Keywords

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