High-performance memory device using graphene oxide flakes sandwiched polymethylmethacrylate layers

S. Valanarasu, I. Kulandaisamy, A. Kathalingam, Jin Koo Rhee, T. A. Vijayan, R. Chandramohan

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. Detailed I-V measurements have shown that in ITO/PMMA/GO/PMMA/Al sandwiches the resistive switching originates from the formation and rupture of conducting filaments. The ON/OFF ratio of the OBDs was approximately 5×103, reproducibility of more than 105 cycles, and retention time of 104 s. These properties show that the device is promising for high-density, low-cost memory application.

Original languageEnglish
Pages (from-to)6755-6759
Number of pages5
JournalJournal of Nanoscience and Nanotechnology
Volume13
Issue number10
DOIs
StatePublished - Oct 2013

Keywords

  • Graphene Oxide.
  • Organic Bistable Memory Devices
  • Polymethyl Methacrylate
  • Solution Processing

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