Abstract
Organic bistable devices (OBDs) using graphene oxide (GO) flakes sandwiched polymethylmethacrylate (PMMA) films were fabricated. These devices exhibited two accessible conducting states, that is, a low-conductivity (OFF) state and a high-conductivity (ON) state. The devices can be switched to ON state under a negative electrical sweep; it can also be reset to the initial OFF state by a reverse (positive) electrical sweep. Detailed I-V measurements have shown that in ITO/PMMA/GO/PMMA/Al sandwiches the resistive switching originates from the formation and rupture of conducting filaments. The ON/OFF ratio of the OBDs was approximately 5×103, reproducibility of more than 105 cycles, and retention time of 104 s. These properties show that the device is promising for high-density, low-cost memory application.
Original language | English |
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Pages (from-to) | 6755-6759 |
Number of pages | 5 |
Journal | Journal of Nanoscience and Nanotechnology |
Volume | 13 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2013 |
Keywords
- Graphene Oxide.
- Organic Bistable Memory Devices
- Polymethyl Methacrylate
- Solution Processing