High-performance metal-oxide semiconductor based optoelectronics

Jaehyun Kim, Sung Min Kwon, Jeong Wan Jo, Chanho Jo, Jaekyun Kim, Yong Hoon Kim, Myung Gil Kim, Sung Kyu Park

Research output: Contribution to journalConference articlepeer-review

Abstract

We investigated high-performance amorphous metal-oxide semiconductor based optoelectronics using low-temperature and solution process technologies. In particular, metal-oxide and quantum dots hybrid phototransistors exhibited ultra-high photodetectivity up to 4x1017 Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal-oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large-scaled ultra-flexible and stretchable device showing promising next-generation wearable optoelectronics.

Original languageEnglish
Pages (from-to)536-539
Number of pages4
JournalDigest of Technical Papers - SID International Symposium
Volume51
Issue number1
DOIs
StatePublished - 2020
Event57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online
Duration: 3 Aug 20207 Aug 2020

Keywords

  • Amorphous metal-oxide semiconductor
  • Flexible/stretchable electronics
  • Neuromorphic devices
  • Optoelectronics
  • Phototransistors

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