Abstract
We investigated high-performance amorphous metal-oxide semiconductor based optoelectronics using low-temperature and solution process technologies. In particular, metal-oxide and quantum dots hybrid phototransistors exhibited ultra-high photodetectivity up to 4x1017 Jones in a broad range of detection wavelength from ultraviolet to infrared ranges. In addition, we employed artificial visual perception circuit based on metal-oxide synaptic transistors with metal chalcogenide semiconductors for optoelectronic neuromorphic devices. We also demonstrated large-scaled ultra-flexible and stretchable device showing promising next-generation wearable optoelectronics.
Original language | English |
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Pages (from-to) | 536-539 |
Number of pages | 4 |
Journal | Digest of Technical Papers - SID International Symposium |
Volume | 51 |
Issue number | 1 |
DOIs | |
State | Published - 2020 |
Event | 57th SID International Symposium, Seminar and Exhibition, Display Week, 2020 - Virtual, Online Duration: 3 Aug 2020 → 7 Aug 2020 |
Keywords
- Amorphous metal-oxide semiconductor
- Flexible/stretchable electronics
- Neuromorphic devices
- Optoelectronics
- Phototransistors