Abstract
A high conversion gain receiver chip set for Q-band millimeter-wave wireless communication systems is designed and fabricated by using 0.1 μm GaAs-based pseudomorphic high electron mobility transistors (PHEMTs) and the coplanar waveguide (CPW) library. The fabricated receiver chip set consists of a subharmonic mixer circuit and a low noise amplifier. From the device characterization, the subharmonic mixer shows a maximum conversion gain of ∼4.8 dB at a RF frequency of 40 GHz for a local oscillation (LO) power of 10 dBm at 17.5 GHz. The subharmonic mixer also exhibits a high degree of isolation characteristic of a -35.8 dB for LO-to-IF and a -40.5 dB for LO-to-RF, respectively, at a LO frequency of 17.5 GHz. The low noise amplifier shows a S21 gain of ∼25.6 dB at a RF frequency of 40 GHz. Due to the high performances of the circuits, the fabricated receiver chip set produces a high conversion gain of 30.4 dB for the Q-band application purpose.
Original language | English |
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Pages | 621-625 |
Number of pages | 5 |
State | Published - 2003 |
Event | IEEE TENCON 2003: Conference on Convergent Technologies for the Asia-Pacific Region - Bangalore, India Duration: 15 Oct 2003 → 17 Oct 2003 |
Conference
Conference | IEEE TENCON 2003: Conference on Convergent Technologies for the Asia-Pacific Region |
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Country/Territory | India |
City | Bangalore |
Period | 15/10/03 → 17/10/03 |