High performance Si nanowire field-effect-transistors based on a CMOS inverter with tunable threshold voltage

Ngoc Huynh Van, Jae Hyun Lee, Jung Inn Sohn, Seung Nam Cha, Dongmok Whang, Jong Min Kim, Dae Joon Kang

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We successfully fabricated nanowire-based complementary metal-oxide semiconductor (NWCMOS) inverter devices by utilizing n- and p-type Si nanowire field-effect-transistors (NWFETs) via a low-temperature fabrication processing technique. We demonstrate that NWCMOS inverter devices can be operated at less than 1 V, a significantly lower voltage than that of typical thin-film based complementary metal-oxide semiconductor (CMOS) inverter devices. This low-voltage operation was accomplished by controlling the threshold voltage of the n-type Si NWFETs through effective management of the nanowire (NW) doping concentration, while realizing high voltage gain (>10) and ultra-low static power dissipation (≤3 pW) for high-performance digital inverter devices. This result offers a viable means of fabricating high-performance, low-operation voltage, and high-density digital logic circuits using a low-temperature fabrication processing technique suitable for next-generation flexible electronics. This journal is

Original languageEnglish
Pages (from-to)5479-5483
Number of pages5
JournalNanoscale
Volume6
Issue number10
DOIs
StatePublished - 21 May 2014

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