High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability

Sung Kyu Park; Yong Hoon Kim; Hyun Soo Kim; Jeong In Han

doi:10.1149/1.3119037

High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability

Sung Kyu Park, Yong Hoon Kim, Hyun Soo Kim, Jeong In Han

Department of Chemical and Biochemical Engineering

Korea Electronics Technology Institute

Research output: Contribution to journal › Article › peer-review

86 Scopus citations

Abstract

We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 μm) have shown a carrier mobility >5 cm² /V s with an on/off current ratio greater than 10⁸ and a subthreshold slope <1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations <0.5-1 V after 1 h current and voltage bias stressing.

Original language	English
Pages (from-to)	H256-H258
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	7
DOIs	https://doi.org/10.1149/1.3119037
State	Published - 2009

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abstract = "We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 μm) have shown a carrier mobility >5 cm2 /V s with an on/off current ratio greater than 108 and a subthreshold slope <1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations <0.5-1 V after 1 h current and voltage bias stressing.",

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AU - Park, Sung Kyu

AU - Kim, Yong Hoon

AU - Kim, Hyun Soo

AU - Han, Jeong In

PY - 2009

Y1 - 2009

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AB - We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 μm) have shown a carrier mobility >5 cm2 /V s with an on/off current ratio greater than 108 and a subthreshold slope <1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations <0.5-1 V after 1 h current and voltage bias stressing.

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JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 7

ER -

High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability

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