High performance solution-processed and lithographically patterned zinc-tin oxide thin-film transistors with good operational stability

We demonstrate high mobility and good stability sol-gel-processed and lithographically patterned amorphous zinc-tin oxide (a-ZTO) thin-film transistors (TFTs). The a-ZTO TFTs (W/L=100/5 μm) have shown a carrier mobility >5 cm² /V s with an on/off current ratio greater than 10⁸ and a subthreshold slope <1.0 V. The devices including solution-processed poly(methyl methacrylate)/silica dual passivation layer on the active channel have typically shown threshold voltage variations <0.5-1 V after 1 h current and voltage bias stressing.