TY - JOUR
T1 - High-Power Microwave-Assisted Ga Doping, an Effective Method to Tailor n-ZnO/p-Si Heterostructure Optoelectronic Characteristics
AU - Rana, Abu ul Hassan Sarwar
AU - Shahid, Areej
AU - Lee, Ji Young
AU - Kim, Hyun Seok
N1 - Publisher Copyright:
© 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
PY - 2018/3/7
Y1 - 2018/3/7
N2 - High-power microwave-assisted gallium (Ga) -doped ZnO nanorods (MGZRs) are grown on p-Si substrates, and their optoelectronic characteristics are reported. Gallium nitrate hydrate is mixed with zinc nitrate hexahydrate and hexamethylenetetramine to make 1, 2, and 5% MGZRs in a domestic microwave oven. The MGZR diameter decreased when doping increased from 1 to 2%, but the diameter of the highly doped (5%) sample significantly increased. The EDS results confirm the incorporation of Ga atoms in the ZnO crystal lattice, where an increase in the dopant concentration in growth solution increase the probability of Ga ion incorporation into ZnO crystal lattice. However, exact values for EDS quantification are not found because of Si peaks from the substrate. The high-intensity photoluminescence UV peaks associated to exciton recombination are blue-shifted, and some defects are incorporated by Ga, which respond to the visible and near-IR regions in MGZRs. Furthermore, the n-MGZR/p-Si heterostructures show a diode-like I–V response, where the current levels increase when the doping concentration increase because of an increase in carrier concentration in MGZRs, which is confirmed by Hall-effect measurements. The MGZRs address the low carrier transport issues in undoped microwave-assisted nanorods and are notably effective in altering their optoelectronic characteristics.
AB - High-power microwave-assisted gallium (Ga) -doped ZnO nanorods (MGZRs) are grown on p-Si substrates, and their optoelectronic characteristics are reported. Gallium nitrate hydrate is mixed with zinc nitrate hexahydrate and hexamethylenetetramine to make 1, 2, and 5% MGZRs in a domestic microwave oven. The MGZR diameter decreased when doping increased from 1 to 2%, but the diameter of the highly doped (5%) sample significantly increased. The EDS results confirm the incorporation of Ga atoms in the ZnO crystal lattice, where an increase in the dopant concentration in growth solution increase the probability of Ga ion incorporation into ZnO crystal lattice. However, exact values for EDS quantification are not found because of Si peaks from the substrate. The high-intensity photoluminescence UV peaks associated to exciton recombination are blue-shifted, and some defects are incorporated by Ga, which respond to the visible and near-IR regions in MGZRs. Furthermore, the n-MGZR/p-Si heterostructures show a diode-like I–V response, where the current levels increase when the doping concentration increase because of an increase in carrier concentration in MGZRs, which is confirmed by Hall-effect measurements. The MGZRs address the low carrier transport issues in undoped microwave-assisted nanorods and are notably effective in altering their optoelectronic characteristics.
KW - doping
KW - gallium
KW - heterostructure
KW - optoelectronics
KW - ZnO
UR - http://www.scopus.com/inward/record.url?scp=85043454585&partnerID=8YFLogxK
U2 - 10.1002/pssa.201700763
DO - 10.1002/pssa.201700763
M3 - Article
AN - SCOPUS:85043454585
SN - 1862-6300
VL - 215
JO - Physica Status Solidi (A) Applications and Materials Science
JF - Physica Status Solidi (A) Applications and Materials Science
IS - 5
M1 - 1700763
ER -