High-pressure gas activation for amorphous indium-gallium-zinc-oxide thin-film transistors at 100 °c
- Won Gi Kim
- , Young Jun Tak
- , Byung Du Ahn
- , Tae Soo Jung
- , Kwun Bum Chung
- , Hyun Jae Kim
- Yonsei University
Research output: Contribution to journal › Article › peer-review
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Scopus
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