Abstract
We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.
Original language | English |
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Pages (from-to) | 707-709 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 26 |
Issue number | 10 |
DOIs | |
State | Published - Oct 2005 |
Keywords
- Metamorphic high-electron mobility transisitors (HEMTs)
- Microwave/millimeter-wave monolithic integrated circuit (MMIC)
- Resistive mixer
- Switching performance