High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Dan An, Bok Hyung Lee, Byeong Ok Lim, Mun Kyo Lee, Sung Chan Kim, Jung Hun Oh, Sam Dong Kim, Hyung Moo Park, Dong Hoon Shin, Jin Koo Rhee

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.

Original languageEnglish
Pages (from-to)707-709
Number of pages3
JournalIEEE Electron Device Letters
Volume26
Issue number10
DOIs
StatePublished - Oct 2005

Keywords

  • Metamorphic high-electron mobility transisitors (HEMTs)
  • Microwave/millimeter-wave monolithic integrated circuit (MMIC)
  • Resistive mixer
  • Switching performance

Fingerprint

Dive into the research topics of 'High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers'. Together they form a unique fingerprint.

Cite this