High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Dan An; Bok Hyung Lee; Byeong Ok Lim; Mun Kyo Lee; Sung Chan Kim; Jung Hun Oh; Sam Dong Kim; Hyung Moo Park; Dong Hoon Shin; Jin Koo Rhee

doi:10.1109/LED.2005.856013

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

Dan An
, Bok Hyung Lee
, Byeong Ok Lim
, Mun Kyo Lee
, Sung Chan Kim
, Jung Hun Oh
, Sam Dong Kim
, Hyung Moo Park
, Dong Hoon Shin
, Jin Koo Rhee

Department of Electronics & Electrical Engineering

Dongguk University

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.

Original language	English
Pages (from-to)	707-709
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	26
Issue number	10
DOIs	https://doi.org/10.1109/LED.2005.856013
State	Published - Oct 2005

Keywords

Metamorphic high-electron mobility transisitors (HEMTs)
Microwave/millimeter-wave monolithic integrated circuit (MMIC)
Resistive mixer
Switching performance

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10.1109/LED.2005.856013

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title = "High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers",

abstract = "We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31\% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.",

keywords = "Metamorphic high-electron mobility transisitors (HEMTs), Microwave/millimeter-wave monolithic integrated circuit (MMIC), Resistive mixer, Switching performance",

author = "Dan An and Lee, \{Bok Hyung\} and Lim, \{Byeong Ok\} and Lee, \{Mun Kyo\} and Kim, \{Sung Chan\} and Oh, \{Jung Hun\} and Kim, \{Sam Dong\} and Park, \{Hyung Moo\} and Shin, \{Dong Hoon\} and Rhee, \{Jin Koo\}",

year = "2005",

month = oct,

doi = "10.1109/LED.2005.856013",

language = "English",

volume = "26",

pages = "707--709",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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T1 - High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

AU - An, Dan

AU - Lee, Bok Hyung

AU - Lim, Byeong Ok

AU - Lee, Mun Kyo

AU - Kim, Sung Chan

AU - Oh, Jung Hun

AU - Kim, Sam Dong

AU - Park, Hyung Moo

AU - Shin, Dong Hoon

AU - Rhee, Jin Koo

PY - 2005/10

Y1 - 2005/10

N2 - We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.

AB - We report high switching performance of 0.1-μm metamorphic high-electron mobility transisitors (HEMTs) for microwave/ millimeter-wave monolithic integrated circuit (MMIC) resistive mixer applications. Very low source/drain resistances and gate capacitances, which are 56 and 31% lower than those of conventional pseudomorphic HEMTs, are due to the optimized epitaxial and device structure. Based on these high-performance metamorphic HEMTs, a 94-GHz MMIC resistive mixer was designed and fabricated, and a very low conversion loss of 8.2 dB at a local oscillator power of 7 dBm was obtained. This is the best performing W-band resistive field-effect transistor mixer in terms of conversion loss utilizing GaAs-based HEMTs reported to date.

KW - Metamorphic high-electron mobility transisitors (HEMTs)

KW - Microwave/millimeter-wave monolithic integrated circuit (MMIC)

KW - Resistive mixer

KW - Switching performance

UR - https://www.scopus.com/pages/publications/27144463717

U2 - 10.1109/LED.2005.856013

DO - 10.1109/LED.2005.856013

M3 - Article

AN - SCOPUS:27144463717

SN - 0741-3106

VL - 26

SP - 707

EP - 709

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 10

ER -

High switching performance 0.1-μm metamorphic HEMTs for low conversion loss 94-GHz resistive mixers

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Keywords

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