High temperature electrical properties of ultra thin Ta2O 5 films on ZnO/n-Si heterolayrs

S. K. Nandi, Jitendra N. Tiwari

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Ultra thin Ta2O5 films have been deposited on ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage current characteristics of Ta 2O5 films have been investigated in the temperature range of 27-200°C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.

Original languageEnglish
Title of host publicationProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Pages417-419
Number of pages3
DOIs
StatePublished - 2007
Event14th International Workshop on the Physics of Semiconductor Devices, IWPSD - Mumbai, India
Duration: 16 Dec 200720 Dec 2007

Publication series

NameProceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD

Conference

Conference14th International Workshop on the Physics of Semiconductor Devices, IWPSD
Country/TerritoryIndia
CityMumbai
Period16/12/0720/12/07

Keywords

  • Dielectric materials
  • MIS devices
  • MOS capacitors
  • Plasma CVD

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