@inproceedings{372774c65c7e4209b417fb5d70c05fdc,
title = "High temperature electrical properties of ultra thin Ta2O 5 films on ZnO/n-Si heterolayrs",
abstract = "Ultra thin Ta2O5 films have been deposited on ZnO/n-Si substrate by microwave plasma enhanced chemical vapor deposition technique. Using metal insulator semiconductor (MIS) capacitor structures, the capacitance-voltage and the leakage current characteristics of Ta 2O5 films have been investigated in the temperature range of 27-200°C. Poole-Frenkel current conduction mechanism was found to be dominated at high temperature.",
keywords = "Dielectric materials, MIS devices, MOS capacitors, Plasma CVD",
author = "Nandi, {S. K.} and Tiwari, {Jitendra N.}",
year = "2007",
doi = "10.1109/IWPSD.2007.4472537",
language = "English",
isbn = "9781424417285",
series = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",
pages = "417--419",
booktitle = "Proceedings of the 14th International Workshop on the Physics of Semiconductor Devices, IWPSD",
note = "14th International Workshop on the Physics of Semiconductor Devices, IWPSD ; Conference date: 16-12-2007 Through 20-12-2007",
}