High transconductance heterostructure field-effect transistors based on AIGaN/GaN

Q. Chen, M. Asif Khan, J. W. Yang, C. J. Sun, M. S. Shur, H. Park

Research output: Contribution to journalArticlepeer-review

115 Scopus citations

Abstract

We report on the fabrication and characterization of Al0.15Ga0.85N/GaN heterostructure field-effect transistors (HFETs) with transconductance as high as 120 mS/mm and saturated current density of 0.35 A/mm for a device with a gate length and width of 1 and 100 μm. This represents one of the best results for such device. A comparison of the maximum transconductance of devices on wafers with different channel conductance is presented to analyze the factors limiting the performance. Our data indicates the series resistance between the source and drain to be the limiting factor for the maximum dc transconductance.

Original languageEnglish
Pages (from-to)794-796
Number of pages3
JournalApplied Physics Letters
Volume69
Issue number6
DOIs
StatePublished - 5 Aug 1996

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