Abstract
In this Letter, we report on high-tunability and low-microwave-loss properties of Ba0.6 Sr0.4 TiO3 (BST) thin films by use of atomic-layer-deposited TiO2 films as the microwave buffer layer between BST and high-resistivity Si substrate. The interdigital capacitor fabricated on BST films grown on TiO2 high resistivity Si (2 kΩ cm) substrates showed the much enhanced tunability value of 33.2% while retaining an appropriate Q factor, as compared to the tunability values of BST (21%) films grown on MgO single-crystal substrates and BST (8.2%) films grown on TiO2 normal Si (10 Ω cm) substrates. The coplanar waveguide BST phase shifter fabricated on TiO2 high resistivity Si exhibited a phase shift of 95° and insertion loss of 3.09 dB at 15 GHz and an applied voltage of 50 V. ALD-grown TiO2 buffer layers enable the successful integration of BST-based microwave tunable devices onto high-resistivity Si wafers.
Original language | English |
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Article number | 212903 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 87 |
Issue number | 21 |
DOIs | |
State | Published - 2005 |