High tunability (Ba,Sr)TiO3 thin films on atomic layer deposited buffer layers for Si integration

Hyun Suk Kim, Mi Hwa Lim, Dae Jin Yang, Ho Gi Kim

Research output: Contribution to conferencePaperpeer-review

1 Scopus citations

Abstract

In this study, we report on Si integration of Ba0.6Sr 0.4TiO3 (BST) thin film based microwave tunable devices by use of TiO2 films as microwave buffer layer between BST and Si substrates. TiO2 buffer layer were grown by Atomic Layer Deposition (ALD) onto Si substrates followed by Pulsed Laser Deposition (PLD) of BST thin films onto the TiO2 buffer layer. The interdigital capacitor (IDC) fabricated on BST films grown on TiO2/high resistivity Si substrates showed much enhanced tunability value of 33.2% while retaining an appropriate Q factor, as compared to 21% value obtained with BST films grown on MgO single crystal substrates. The microwave phase shifters were fabricated on BST thin films to investigate the potential feasibility of integrating BST films as microwave tunable devices. The phase shifter fabricated on BST films grown on TiO2/Si substrate showed better figure of merit (FOM) of 30.7°/dB, as compared to 12.1°/dB of BST/MgO structure. ALD grown TiO2 buffer layers enable successful integration of BST based microwave tunable devices onto high resistivity Si wafers.

Original languageEnglish
Pages644-645
Number of pages2
StatePublished - 2005
Event2005 International Symposium on Electrical Insulating Materials, ISEIM 2005 - Kitakyushu, Japan
Duration: 5 Jun 20059 Jun 2005

Conference

Conference2005 International Symposium on Electrical Insulating Materials, ISEIM 2005
Country/TerritoryJapan
CityKitakyushu
Period5/06/059/06/05

Fingerprint

Dive into the research topics of 'High tunability (Ba,Sr)TiO3 thin films on atomic layer deposited buffer layers for Si integration'. Together they form a unique fingerprint.

Cite this