@inproceedings{102a5e4257d245089488f51d1b96cbc0,
title = "Highly-sensitive plasmonic nano-ring transistor for monolithic terahertz active antenna",
abstract = "We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (RV) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz0.5 (x 1/10).",
keywords = "monolithic active antenna, nano-ring transistor, noise-equivalent power, plasmonic, responsivity",
author = "Ryu, {Min Woo} and Ramesh Patel and Esan Jang and Ahn, {Sang Hyo} and Jeon, {Hyeong Ju} and Choe, {Mun Seok} and Eunmi Choi and Han, {Ki Jin} and Kim, {Kyung Rok}",
note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 17th IEEE International Conference on Nanotechnology, NANO 2017 ; Conference date: 25-07-2017 Through 28-07-2017",
year = "2017",
month = nov,
day = "21",
doi = "10.1109/NANO.2017.8117385",
language = "English",
series = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "17--21",
booktitle = "2017 IEEE 17th International Conference on Nanotechnology, NANO 2017",
address = "United States",
}