Highly-sensitive plasmonic nano-ring transistor for monolithic terahertz active antenna

  • Min Woo Ryu
  • , Ramesh Patel
  • , Esan Jang
  • , Sang Hyo Ahn
  • , Hyeong Ju Jeon
  • , Mun Seok Choe
  • , Eunmi Choi
  • , Ki Jin Han
  • , Kyung Rok Kim

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

We report a highly-sensitive plasmonic nano-ring transistor for monolithic terahertz (THz) active antenna. By designing an ultimate asymmetric transistor on a metal-gate structure, more enhanced (180 times) channel charge asymmetry has been obtained in comparison with a bar-type asymmetric transistor of our previous work. In addition, by exploiting ring-type transistor itself as a monolithic circular active antenna, which is designed for a 0.12-THz resonance frequency, we experimentally demonstrated the highly-enhanced responsivity (RV) > 1 kV/W (x 5) and reduced noise-equivalent power (NEP) < 10 pW/Hz0.5 (x 1/10).

Original languageEnglish
Title of host publication2017 IEEE 17th International Conference on Nanotechnology, NANO 2017
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages17-21
Number of pages5
ISBN (Electronic)9781509030286
DOIs
StatePublished - 21 Nov 2017
Event17th IEEE International Conference on Nanotechnology, NANO 2017 - Pittsburgh, United States
Duration: 25 Jul 201728 Jul 2017

Publication series

Name2017 IEEE 17th International Conference on Nanotechnology, NANO 2017

Conference

Conference17th IEEE International Conference on Nanotechnology, NANO 2017
Country/TerritoryUnited States
CityPittsburgh
Period25/07/1728/07/17

Keywords

  • monolithic active antenna
  • nano-ring transistor
  • noise-equivalent power
  • plasmonic
  • responsivity

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